may2012.version1.1 magnachipsemiconductorltd . 1 mdp12n50b/mdf12n50bnchannelmosfet500v absolutemaximumratings(ta=25 o c) characteristics symbol mdp12n50b mdf12n50b unit drainsourcevoltage v dss 500 v gatesourcevoltage v gss 30 v continuousdraincurrent t c =25 o c i d 11.5 11.5* a t c =100 o c 7.0 7.0* a pulseddraincurrent (1) i dm 46 46* a powerdissipation t c =25 o c p d 165 42 w derateabove25 o c 1.33 0.32 w/ o c repetitiveavalancheenergy (1) e ar 16.5 mj peakdioderecoverydv/dt (3) dv/dt 4.5 v/ns singlepulseavalancheenergy (4) e as 460 mj junctionandstoragetemperaturerange t j ,t stg 55~150 o c idlimitedbymaximumjunctiontemperature thermalcharacteristics characteristics symbol mdp12n50b mdf12n50b unit thermalresistance,junctiontoambient (1) r ja 62.5 62.5 o c/w thermalresistance,junctiontocase (1) r jc 0.75 3.0 mdp12n50 b/mdf12n50b nchannelmosfet500v,11.5a,0.65 generaldescription themdp/f12n50busesadvancedmagnachip s mosfettechnology,whichprovideslowonstate resistance,highswitchingperformanceand excellentquality. mdp/f12n50bissuitabledeviceforsmps,high speedswitchingandgeneralpurposeapplications. features v ds =500v i d =11.5a @v gs =10v r ds(on) 0.65 @v gs =10v applications powersupply pfc ballast
may2012.version1.1 magnachipsemiconductorltd . 2 mdp12n50b/mdf12n50bnchannelmosfet500v orderinginformation partnumber temp.range package packing rohsstatus MDP12N50BTH 55~150 o c to220 tube halogenfree mdf12n50bth 55~150 o c to220f tube halogenfree electricalcharacteristics(ta=25 o c) characteristics symbol testcondition min typ max unit staticcharacteristics drainsourcebreakdownvoltage bv dss i d =250a,v gs =0v 500 v gatethresholdvoltage v gs(th) v ds =v gs ,i d =250a 2.0 4.0 draincutoffcurrent i dss v ds =500v,v gs =0v 1 a gateleakagecurrent i gss v gs =30v,v ds =0v 100 na drainsourceonresistance r ds(on) v gs =10v,i d =5.75a 0.55 0.65 forwardtransconductance g fs v ds =30v,i d =5.75a 15 s dynamiccharacteristics totalgatecharge q g v ds =400v,i d =11.5a,v gs =10v (3) 19.3 nc gatesourcecharge q gs 4.6 gatedraincharge q gd 6.1 inputcapacitance c iss v ds =25v,v gs =0v,f=1.0mhz 1034 pf reversetransfercapacitance c rss 5.1 outputcapacitance c oss 126 turnon delaytime t d(on) v gs =10v,v ds =250v,i d =11.5a, r g =25 (3) 16 ns risetime t r 35 turnoffdelaytime t d(off) 31 falltime t f 40 drainsourcebodydiodecharacteristics maximumcontinuousdraintosource diodeforwardcurrent i s 11.5 a sourcedraindiodeforwardvoltage v sd i s =11.5a,v gs =0v 1.4 v bodydiodereverserecoverytime t rr i f =11.5a,di/dt=100a/s 310 ns bodydiodereverserecovery charge q rr 2.6 c note: 1.pulsewidthisbasedonr jc &r ja andthemaximumallowedjunctiontemperatureof150c. 2.pulsetest:pulsewidth300us,dutycycle2%,pulse widthlimitedbyjunctiontemperaturet j(max) =150c. 3.i sd 11.5a,di/dt200a/us, v dd bv dss , r g =25,startingt j =25c 4.l=6.3mh,i as =11.5a,v dd =50v,,r g =25,startingt j =25c
may2012.version1.1 magnachipsemiconductorltd . 3 mdp12n50b/mdf12n50bnchannelmosfet500v fig.5transfercharacteristics fig.1onregioncharacteristics fig.2onresistancevariationwith draincurrentandgatevoltage fig.3onresistancevariationwith temperature fig.4 breakdown voltage variation vs. temperature fig.6 body diode forward voltage variation with source current and temperature 50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes: 1.v gs =0v 2.i d =250 ? bv dss ,(normalized) drainsourcebreakdownvoltage t j ,junctiontemperature[ o c] 2 3 4 5 6 7 8 9 0.1 1 10 55 25 150 *notes; 1.vds=30v i d (a) v gs [v] 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 25 150 notes: 1.v gs =0v 2.250 spulsetest i dr reversedraincurrent[a] v sd ,sourcedrainvoltage[v] 50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes: 1.v gs =10v 2.i d =5.75a r ds(on) ,(normalized) drainsourceonresistance t j ,junctiontemperature[ o c] 0 5 10 15 20 0 4 8 12 16 20 notes 1.250 ? ?? ? pulsetest 2.t c =25 v gs =5.0v =5.5v =6.0v =6.5v =7.0v =8.0v =10.0v =15.0v i d ,draincurrent[a] v ds ,drainsourcevoltage[v] 0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 0.4 0.6 0.8 1.0 1.2 1.4 v gs =10v v gs =20v r ds(on) [ ] i d ,draincurrent[a]
may2012.version1.1 magnachipsemiconductorltd . 4 mdp12n50b/mdf12n50bnchannelmosfet500v fig.7gatechargecharacteristics fig.8capacitancecharacteristics fig.9maximumsafeoperatingarea mdp12n50b(to220) fig.10 maximum drain current vs. case temperature fig.11transientthermalresponsecurve mdp12n50b(to220) fig.12 single pulse maximum power dissipation C mdp12n50b(to220) 1 10 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 c iss =c gs +c gd (c ds =shorted) c oss =c ds +c gd c rss =c gd notes; 1.v gs =0v 2.f=1mhz c rss c oss c iss capacitance[pf] v ds ,drainsourcevoltage[v] 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 8 10 400v 250v 100v note:i d =11.5a v gs ,gatesourcevoltage[v] q g ,totalgatecharge[nc] 10 1 10 0 10 1 10 2 10 2 10 1 10 0 10 1 10 2 10 s 100 s 100ms dc 10ms 1ms operationinthisarea islimitedbyr ds(on) singlepulse t j =maxrated t c =25 i d ,draincurrent[a] v ds ,drainsourcevoltage[v] 10 5 10 4 10 3 10 2 10 1 10 0 10 1 10 2 10 1 10 0 notes: dutyfactor,d=t 1 /t 2 peakt j =p dm *z jc *r jc (t)+t c r jc =0.75 /w singlepulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermalresponse t 1 ,rectangularpulseduration[sec] 1e5 1e4 1e3 0.01 0.1 1 0 3000 6000 9000 12000 15000 singlepulse r thjc =0.75 /w t c =25 power(w) pulsewidth(s) 25 50 75 100 125 150 0 2 4 6 8 10 12 14 i d ,draincurrent[a] t c ,casetemperature[ ]
may2012.version1.1 magnachipsemiconductorltd . 5 mdp12n50b/mdf12n50bnchannelmosfet500v fig.13maximumsafeoperatingarea mdf12n50b(to220f) fig.14 single pulse maximum power dissipation C mdf12n50b(to220f) fig.15transientthermalresponsecurve mdf12n50b(to220f) 10 1 10 0 10 1 10 2 10 2 10 1 10 0 10 1 10 2 10 s 100 s 100ms dc 10ms 1ms operationinthisarea islimitedbyr ds(on) singlepulse t j =maxrated t c =25 i d ,draincurrent[a] v ds ,drainsourcevoltage[v] 1e5 1e4 1e3 0.01 0.1 1 10 0 2000 4000 6000 8000 10000 singlepulse r thjc =3.0 /w t c =25 power(w) pulsewidth(s) 10 5 10 4 10 3 10 2 10 1 10 0 10 1 10 2 10 1 10 0 notes: dutyfactor,d=t 1 /t 2 peakt j =p dm *z jc *r jc (t)+t c r ja =110 /w singlepulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermalresponse t 1 ,rectangularpulseduration[sec]
may2012.version1.1 magnachipsemiconductorltd . 6 mdp12n50b/mdf12n50bnchannelmosfet500v physicaldimensions 3leads,to220 dimensionsareinmillimetersunlessotherwisespec ified
may2012.version1.1 magnachipsemiconductorltd . 7 mdp12n50b/mdf12n50bnchannelmosfet500v physicaldimension 3leads,to220f dimensionsareinmillimetersunlessotherwisespec ified symbol min nom max a 4.50 4.93 b 0.63 0.91 b1 1.15 1.47 c 0.33 0.63 d 15.47 16.13 e 9.60 10.71 e 2.54 f 2.34 2.84 g 6.48 6.90 l 12.24 13.72 l1 2.79 3.67 q 2.52 2.96 q1 3.10 3.50 r 3.00 3.55
may2012.version1.1 magnachipsemiconductorltd . 8 mdp12n50b/mdf12n50bnchannelmosfet500v worldwidesalessupportlocations u.s.a sunnyvaleoffice 787n.maryave.sunnyvale ca94085u.s.a tel:14086365200 fax:14082132450 email:usasales@magnachip.com u.k knyvetthousethecauseway, stainesmiddx,tw183ba,u.k. tel:+44(0)1784895000 fax:+44(0)1784895115 email:uksales@magnachip.com japan osakaoffice 3f,shinosakamt2bldg3536 miyaharayodogawaku osaka,5320003japan tel:81663949160 fax:81663949150 email:osakasales@magnachip.com taiwanr.o.c 2f,no.61,chowizestreet,neihu taipei,114taiwanr.o.c tel:886226577898 fax:886226578751 email:taiwansales@magnachip.com china hongkongoffice suite1024,oceancentre5cantonroad, tsimshatsuikowloon,hongkong tel:85228289700 fax:85228028183 email:chinasales@magnachip.com shenzhenoffice room2003b,20/f internationalchamberofcommercetower fuhuaroad3cbd,futiandistrict,china tel:8675588315561 fax:8675588315565 email:chinasales@magnachip.com shanghaioffice roome,8/f,liaosheninternationalbuilding1068 wuzhongroad,(c)201103 shanghai,china tel:862164051521 fax:862165051523 email:chinasales@magnachip.com korea 891,daechidong,kangnamgu seoul,135738korea tel:82269033451 fax:82269033668~9 email:koreasales@magnachip.com disclaimer: theproductsarenotdesignedforuseinhostileenvironm ents,including,withoutlimitation,aircraft,nuclear power generation, medical appliances, and devices or systems in which malfunction of any product can reasonably be expected to result in a personal injury. sellers custome rs using or selling sellers products for use in such applicationsdosoattheirownriskandagreetofully defendandindemnifyseller. \ magnachipreservestherighttochangethespecific ationsandcircuitrywithoutnoticeatanytime.ma gnachipdoesnotconsiderresponsibility for use of any circuitry other than circuitry entir ely included in a magnachip product. is a registered trademark of magnachip semiconductorltd.
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